High-Efficiency 200-GHz Neutralized Common-Base Power Amplifiers in 250-nm InP HBT
نویسندگان
چکیده
The analysis, design, and measurement of two Indium Phosphide (InP) heterojunction bipolar transistor (HBT) power amplifier (PA) designs are presented at G-band with record efficiency. A pseudo-differential common-base (CB) stage neutralization capacitors low-loss coupled-line balun (CLB) improve the gain reduce matching loss. single-stage design achieves 8.3 to 12.7-dBm output 7.7 17.3% power-added efficiency (PAE) over 180 220 GHz. use compact baluns allows occupy only 0.011mm 2 density 1.69 W/mm . 3-stage, 4-way power-combined PA delivers 16.6 19.7-dBm 6.5 13% PAE 185 210
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ژورنال
عنوان ژورنال: IEEE journal of microwaves
سال: 2023
ISSN: ['2692-8388']
DOI: https://doi.org/10.1109/jmw.2023.3249203